English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarHT™ HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 26mOhm @ 48A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 110 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 120W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS220™ |
| 包/箱: | ISOPLUS220™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7403TRIR (Infineon Technologies) |
MOSFET N-CH 30V 8.5A 8SO |
|
BSP296L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.1A SOT223-4 |
|
HUF76639S3ST-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 100V 51A TO-263AB |
|
FQP47P06_SW82049Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 47A TO220-3 |
|
IRF6643TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 6.2A DIRECTFET |
|
IXTA90N055TWickmann / Littelfuse |
MOSFET N-CH 55V 90A TO263 |
|
STI11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
BSP149 E6327IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
IRF5305LIR (Infineon Technologies) |
MOSFET P-CH 55V 31A TO262 |
|
SPW17N80C3AIR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |
|
IRF610SVishay / Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
|
TK4A55DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 3.5A TO220SIS |
|
IRL620Vishay / Siliconix |
MOSFET N-CH 200V 5.2A TO220AB |
