类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 1.4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 220mOhm @ 910mA, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 4.1 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 150 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 625mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
TQM150NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 10A/41A PDFN56U |
![]() |
FQD10N20TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK |
![]() |
HUFA76413P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 23A TO220-3 |
![]() |
IRF6611TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A DIRECTFET |
![]() |
BSS84AKT,115NXP Semiconductors |
MOSFET P-CH 50V 150MA SC75 |
![]() |
IRLI640GVishay / Siliconix |
MOSFET N-CH 200V 9.9A TO220-3 |
![]() |
ZXMNS3BM832TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2A 8MLP |
![]() |
IRLR9343-701PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 20A IPAK |
![]() |
AON1611Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 4A 6DFN |
![]() |
NTJS3157NT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SC88/SC70-6 |
![]() |
IRF3704ZCLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 67A TO262 |
![]() |
IPP06CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
![]() |
IRFIB7N50LPBFVishay / Siliconix |
MOSFET N-CH 500V 6.8A TO220-3 |