English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 24.5mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 740 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 48W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251AA |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPI80N06S2L-05IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO262-3 |
|
IRF7457TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 15A 8SO |
|
FQB34P10TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 33.5A D2PAK |
|
IXFR150N15Wickmann / Littelfuse |
MOSFET N-CH 150V 105A ISOPLUS247 |
|
IRFR3711PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 100A DPAK |
|
IPU60R1K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.3A TO251-3 |
|
TK12P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 11.5A DPAK |
|
MCH6342-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 4.5A 6MCPH |
|
2SK3128(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A TO3P |
|
IRFIBC30GVishay / Siliconix |
MOSFET N-CH 600V 2.5A TO220-3 |
|
FQD9N25TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
IRFS4010-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 190A D2PAK |
|
IRFR5410TRLIR (Infineon Technologies) |
MOSFET P-CH 100V 13A DPAK |
