English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 165mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 910 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3W (Ta), 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF5305STRRIR (Infineon Technologies) |
MOSFET P-CH 55V 31A D2PAK |
|
IRF7526D1TRIR (Infineon Technologies) |
MOSFET P-CH 30V 2A MICRO8 |
|
IRF7210PBFIR (Infineon Technologies) |
MOSFET P-CH 12V 16A 8SO |
|
IPU060N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
|
NTMFS5C410NLTWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
AOT472Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 10A/140A TO220 |
|
SI5853CDC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4A 1206-8 |
|
TSM2311CX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 4A SOT23 |
|
IRFS41N15DPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 41A D2PAK |
|
SUD50N025-06P-E3Vishay / Siliconix |
MOSFET N-CH 25V 78A TO252 |
|
IPS10N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO251-3 |
|
STW55NM60NSTMicroelectronics |
MOSFET N-CH 600V 51A TO247-3 |
|
ZVN3306ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA E-LINE |
