English
简体中文
RES 172K OHM 1/8W .25% AXIAL
ULTRASONIC SENSOR HRXL-MAXSONAR
MOSFET N-CH 600V 7.6A TO220ABFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.1mA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1520 pF @ 100 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220ABFP |
| 包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL1404SIR (Infineon Technologies) |
MOSFET N-CH 40V 160A D2PAK |
|
FQI7N10TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7.3A I2PAK |
|
IRF7700TRIR (Infineon Technologies) |
MOSFET P-CH 20V 8.6A 8TSSOP |
|
NTD18N06GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A DPAK |
|
BSO4420TIR (Infineon Technologies) |
MOSFET N-CH 30V 13A 8SO |
|
IRF740LCVishay / Siliconix |
MOSFET N-CH 400V 10A TO220AB |
|
AUIRLL014NIR (Infineon Technologies) |
MOSFET N-CH 55V 2A SOT-223 |
|
MIC94053BC6-TRRoving Networks / Microchip Technology |
MOSFET P-CH 6V 2A SC70-6 |
|
SPP80N06S2L-07IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
|
STB30NM50NSTMicroelectronics |
MOSFET N-CH 500V 27A D2PAK |
|
NVTFS4824NWFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18.2A 8WDFN |
|
IRLR7811WCPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A DPAK |
|
IRFSL31N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 31A TO262 |