RES SMD 20K OHM 5% 1/4W 1206
MOSFET N-CH 100V 80A TO268
类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 15mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 4V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 360W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-268 |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI3407DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 8A 6TSOP |
|
FQPF9N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 8A TO220F |
|
NTD80N02T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 80A DPAK |
|
APT60M80JVRMicrosemi |
MOSFET N-CH 600V 55A ISOTOP |
|
IXFV12N80PWickmann / Littelfuse |
MOSFET N-CH 800V 12A PLUS220 |
|
SIS424DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 35A PPAK 1212-8 |
|
SI3441BDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.45A 6TSOP |
|
NTB30N06T4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 27A D2PAK |
|
IRFR320Vishay / Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
|
NDF10N62ZGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 620V 10A TO220FP |
|
2SK3431-Z-E1-AZRenesas Electronics America |
MOSFET N-CH 40V 83A TO220AB |
|
2SJ656Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 18A TO220ML |
|
IRF7455PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 15A 8SO |