English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Ta), 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.5mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 115 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2120 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 29W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (3x3) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN3020LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11.3A TO252-3 |
|
NTD6415ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 23A DPAK |
|
IRL510Vishay / Siliconix |
MOSFET N-CH 100V 5.6A TO220AB |
|
NTB75N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
AOL1206Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 16A/54A ULTRASO8 |
|
IXFK21N100FWickmann / Littelfuse |
MOSFET N-CH 1000V 21A TO264 |
|
AOD4158PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A/46A TO252 |
|
IRF7779L2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 375A DIRECTFET |
|
IRF7807TRIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
|
NDS9407_GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A 8SOIC |
|
HUFA75321D3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 20A TO252AA |
|
RJK0852DPB-00#J5Renesas Electronics America |
MOSFET N-CH 80V 30A LFPAK |
|
SI4829DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2A 8SO |
