类型 | 描述 |
---|---|
系列: | PowerMESH™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 14.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 360mOhm @ 7.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 3400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLR3303TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |
|
TLC530FTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 330V 7A TO220-3 |
|
IRFPS35N50LPBFVishay / Siliconix |
MOSFET N-CH 500V 34A SUPER247 |
|
IPD60R950C6IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO252-3 |
|
PHB153NQ08LT,118NXP Semiconductors |
MOSFET N-CH 75V 75A D2PAK |
|
SPP20N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO220-3 |
|
NP100P06PLG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 100A TO263 |
|
SI7664DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
NTB30N20GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 30A D2PAK |
|
IRFB4215IR (Infineon Technologies) |
MOSFET N-CH 60V 115A TO220AB |
|
IRFBE30SVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
|
UPA2812T1L-E1-ATRenesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON |
|
SI4322DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A 8SO |