English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.1mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 125 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 7770 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5.4W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTB30N20GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 30A D2PAK |
|
IRFB4215IR (Infineon Technologies) |
MOSFET N-CH 60V 115A TO220AB |
|
IRFBE30SVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
|
UPA2812T1L-E1-ATRenesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON |
|
SI4322DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A 8SO |
|
TK40P03M1(T6RDS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 40A DPAK |
|
IXFN100N10S1Wickmann / Littelfuse |
MOSFET N-CH 100V 100A SOT-227B |
|
IRLR014NTRIR (Infineon Technologies) |
MOSFET N-CH 55V 10A DPAK |
|
IXFH9N80QWickmann / Littelfuse |
MOSFET N-CH 800V 9A TO247AD |
|
STD50N03LSTMicroelectronics |
MOSFET N-CH 30V 40A DPAK |
|
SUD23N06-31L-E3Vishay / Siliconix |
MOSFET N-CH 60V TO252 |
|
IXFK52N30QWickmann / Littelfuse |
MOSFET N-CH 300V 52A TO264AA |
|
STB45NF06STMicroelectronics |
MOSFET N-CH 60V 38A D2PAK |
