类型 | 描述 |
---|---|
系列: | HiPerFET™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 300 V |
电流 - 连续漏极 (id) @ 25°c: | 52A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 60mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 4V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 360W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-264AA (IXFK) |
包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STB45NF06STMicroelectronics |
MOSFET N-CH 60V 38A D2PAK |
|
IRF7811APBFIR (Infineon Technologies) |
MOSFET N-CH 28V 11A 8SO |
|
IRFBF20STRLVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
SPI80N03S2L-05IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO262-3 |
|
NTHS5441PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.9A CHIPFET |
|
IRF7324D1PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 2.2A 8SO |
|
IRLU3705ZIR (Infineon Technologies) |
MOSFET N-CH 55V 42A I-PAK |
|
IPI80N08S207AKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO262-3 |
|
UPA2813T1L-E1-ATRenesas Electronics America |
MOSFET P-CH 30V 27A 8HVSON |
|
AOB11N60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO263 |
|
RSS105N03TBROHM Semiconductor |
MOSFET N-CH 30V 10.5A 8SOP |
|
IPP03N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO220-3 |
|
FDB7030L_L86ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A TO263AB |