类型 | 描述 |
---|---|
系列: | eGaN® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | N-Channel |
技术: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 16mOhm @ 11A, 5V |
vgs(th) (最大值) @ id: | 2.5V @ 3mA |
栅极电荷 (qg) (max) @ vgs: | 5.2 nC @ 5 V |
vgs (最大值): | +6V, -5V |
输入电容 (ciss) (max) @ vds: | 520 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | -40°C ~ 125°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | Die |
包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STN1N20STMicroelectronics |
MOSFET N-CH 200V 1A SOT223 |
|
BUK7620-55A,118Nexperia |
MOSFET N-CH 55V 54A D2PAK |
|
BSP297 E6327IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
TK45P03M1,RQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 45A DPAK |
|
AO4438_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 60V 8.2A 8SO |
|
IRFR3707ZPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 56A DPAK |
|
FDC636PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.8A SUPERSOT6 |
|
IRLR3303PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |
|
NTD6600N-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A IPAK |
|
RJK6013DPP-E0#T2Renesas Electronics America |
MOSFET N-CH 600V 11A TO220FP |
|
SI1419DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 300MA SC70-6 |
|
SI3805DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.3A 6TSOP |
|
IRFR024NTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |