English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UniFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 290mOhm @ 7A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1060 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLZ44STRRVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
NTD4913N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.7A/32A IPAK |
|
FDC602P_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 5.5A SUPERSOT6 |
|
IRF7702TRPBFIR (Infineon Technologies) |
MOSFET P-CH 12V 8A 8TSSOP |
|
FQD13N06TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A DPAK |
|
SUP60N10-18P-E3Vishay / Siliconix |
MOSFET N-CH 100V 60A TO220AB |
|
SI4654DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 28.6A 8SO |
|
STI15NM60NDSTMicroelectronics |
MOSFET N-CH 600V 14A I2PAK |
|
AO3400_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 5.8A SOT23 |
|
IRFR3504ZTRLIR (Infineon Technologies) |
MOSFET N-CH 40V 42A DPAK |
|
BSS127 E6327IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
IRFI9640GVishay / Siliconix |
MOSFET P-CH 200V 6.1A TO220-3 |
|
SUD50N03-16P-E3Vishay / Siliconix |
MOSFET N-CH 30V TO252 |
