类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 435mOhm @ 4.8A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 620 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.8W (Ta), 88W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM3K309T(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 4.7A TSM |
|
SPB100N03S2L-03 GIR (Infineon Technologies) |
MOSFET N-CH 30V 100A TO263-3 |
|
SPP80N04S2-H4IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
SPP04N60C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 4.5A TO220-3 |
|
IRFB4510GPBFIR (Infineon Technologies) |
MOSFET N CH 100V 62A TO-220AB |
|
AON6780Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 30A/85A 8DFN |
|
RDN100N20ROHM Semiconductor |
MOSFET N-CH 200V 10A TO220FN |
|
FQD13N06LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A DPAK |
|
AOT11C60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 600V 11A TO220 |
|
FQI9N08LTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.3A I2PAK |
|
SIS612EDNT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A PPAK1212-8S |
|
FDMA905P_F130Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 10A 6MICROFET |
|
BUK7107-40ATC,118Nexperia |
MOSFET N-CH 40V 75A SOT426 |