English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ II |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 29A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 105mOhm @ 14.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 84 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2722 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 40W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAKFP (TO-281) |
| 包/箱: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFL210Vishay / Siliconix |
MOSFET N-CH 200V 960MA SOT223 |
|
IRLZ14LVishay / Siliconix |
MOSFET N-CH 60V 10A TO262-3 |
|
HUF75842S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 43A D2PAK |
|
IRLU4343PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 26A I-PAK |
|
MTD5P06VT4GVSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 5A DPAK |
|
SPB47N10IR (Infineon Technologies) |
MOSFET N-CH 100V 47A TO263-3 |
|
NVMFS6B05NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 104A 5DFN |
|
IXTA200N075T7Wickmann / Littelfuse |
MOSFET N-CH 75V 200A TO263-7 |
|
SUD50N03-09P-E3Vishay / Siliconix |
MOSFET N-CH 30V 63A TO252 |
|
IPB80N06S2L11ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
AOT12N65_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 12A TO220 |
|
SPD50N06S2L-13IR (Infineon Technologies) |
MOSFET N-CH 55V 50A TO252-3 |
|
SPP02N60C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 1.8A TO220-3 |
