English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 31mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 29 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 750 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | IPAK (TO-251) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXKH30N60C5Wickmann / Littelfuse |
MOSFET N-CH 600V 30A TO247AD |
|
SI7802DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 250V 1.24A PPAK |
|
SIR878ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
|
IRL3302LVishay / Siliconix |
MOSFET N-CH 20V 39A TO262-3 |
|
SPD50N03S207GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-3 |
|
FDC5612_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4.3A SUPERSOT6 |
|
IPP80N04S204AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
NTD14N03R-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 2.5A IPAK |
|
AO4264Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 12A 8SO |
|
IRL3714STRRIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
HUFA76439S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
IRFR1N60ATRRVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
ZXMN3A01FTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 1.8A SOT23-3 |
