English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6.3Ohm @ 900mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 550 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 50W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTJS3157NT2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SC88/SC70-6 |
|
IRF737LCLVishay / Siliconix |
MOSFET N-CH 300V 6.1A I2PAK |
|
SI5406DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 6.9A 1206-8 |
|
MTD20P06HDLT4Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 15A DPAK |
|
IXFX12N90QWickmann / Littelfuse |
MOSFET N-CH 900V 12A PLUS247-3 |
|
STY80NM60NSTMicroelectronics |
MOSFET N-CH 600V 74A MAX247 |
|
2SK3309(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 10A TO220FL |
|
STN1NF10STMicroelectronics |
MOSFET N-CH 100V 1A SOT-223 |
|
PMF280UN,115NXP Semiconductors |
MOSFET N-CH 20V 1.02A SOT323-3 |
|
FDPF79N15Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 79A TO220F |
|
IRF1405ZTRRVishay / Siliconix |
MOSFET N-CH 55V 75A TO220AB |
|
IPI037N08N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO262-3 |
|
STD70N03L-1STMicroelectronics |
MOSFET N-CH 30V 70A IPAK |
