English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 74mOhm @ 2.8A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.7 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 744 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 480mW (Ta), 4.17W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-236AB |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HAT2116H-EL-ERenesas Electronics America |
MOSFET N-CH 30V 30A LFPAK |
|
IRF6665TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 4.2A DIRECTFET |
|
FQP13N50C_F105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 13A TO220-3 |
|
NVMFS6B03NWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 132A 5DFN |
|
IPB160N04S2L03ATMA2IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
|
IRFR9210TRLVishay / Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
|
IRLMS2002GTRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 6.5A MICRO6 |
|
ZVN3320FTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 60MA SOT23-3 |
|
IXTP2N80Wickmann / Littelfuse |
MOSFET N-CH 800V 2A TO220AB |
|
IXFH6N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 6A TO247AD |
|
HAT2256RWS-ERenesas Electronics America |
MOSFET N-CH 60V 8A 8SOP |
|
SI1402DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.7A SC70-6 |
|
NVTFS5826NLWFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.6A 8WDFN |
