类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta), 37A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 11.5mOhm @ 8.7A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1462 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.7W (Ta), 33W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-WDFN (3.3x3.3) |
包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
AO4407A_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
![]() |
SIHG30N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AC |
![]() |
IRF7233PBFIR (Infineon Technologies) |
MOSFET P-CH 12V 9.5A 8SO |
![]() |
IRLD014Vishay / Siliconix |
MOSFET N-CH 60V 1.7A 4DIP |
![]() |
ZXM64N02XTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 5.4A 8MSOP |
![]() |
IRFR3708PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
![]() |
APT5518BFLLGMicrosemi |
MOSFET N-CH 550V 31A TO247-3 |
![]() |
DMP2066LVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.5A TSOT26 |
![]() |
IPI120N06S402AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262-3 |
![]() |
SI3458DV-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 3.2A 6TSOP |
![]() |
SI5499DC-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 6A 1206-8 CHIPFET |
![]() |
RJK0603DPN-E0#T2Renesas Electronics America |
MOSFET N-CH 60V 80A TO220AB |
![]() |
IPB60R520CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6.8A D2PAK |