类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 8.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 20mOhm @ 7A, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 45 nC @ 5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 2520 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.8W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | Micro8™ |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSO094N03SIR (Infineon Technologies) |
MOSFET N-CH 30V 10A 8DSO |
|
ZVN2120AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 180MA TO92-3 |
|
IPD65R650CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.1A TO252-3 |
|
IXTV30N60PWickmann / Littelfuse |
MOSFET N-CH 600V 30A PLUS220 |
|
IRL8113LPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 105A TO262 |
|
94-4007IR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |
|
IRFH4210TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 45A PQFN |
|
NVB6412ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 58A D2PAK-3 |
|
IXFV96N20PWickmann / Littelfuse |
MOSFET N-CH 200V 96A PLUS220 |
|
IPD16CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 53A TO252-3 |
|
IXFB80N50Q2Wickmann / Littelfuse |
MOSFET N-CH 500V 80A PLUS264 |
|
FQD8P10TM_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6.6A DPAK |
|
AOC2403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.8A 4ALPHADFN |