类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 5.7mOhm @ 80A, 10V |
vgs(th) (最大值) @ id: | 4V @ 60µA |
栅极电荷 (qg) (max) @ vgs: | 81 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 107W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-3-1 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SPP100N08S2L-07IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TO220-3 |
![]() |
AO3422LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 55V 2.1A SOT23-3 |
![]() |
AO4292Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8A 8SOIC |
![]() |
SPU09P06PLIR (Infineon Technologies) |
MOSFET P-CH 60V 9.7A TO251-3 |
![]() |
GA10JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 10A TO247AB |
![]() |
STP6N120K3STMicroelectronics |
MOSFET N-CH 1200V 6A TO220 |
![]() |
BUZ10STMicroelectronics |
MOSFET N-CH 50V 23A TO220AB |
![]() |
IRLBL1304IR (Infineon Technologies) |
MOSFET N-CH 40V 185A SUPER D2PAK |
![]() |
APT23F60SMicrosemi |
MOSFET N-CH 600V 24A D3PAK |
![]() |
AOTF262LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 17.5A/85A TO220 |
![]() |
AUIRF2804L-313IR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO262 |
![]() |
IXTR90P10PWickmann / Littelfuse |
MOSFET P-CH 100V 57A ISOPLUS247 |
![]() |
NTD2955PT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |