English
简体中文
IC REG LINEAR 3.2V 150MA 4DFN
MOSFET N-CH 25V 40A D2PAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 970 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 107W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SUM110P08-11-E3Vishay / Siliconix |
MOSFET P-CH 80V 110A TO263 |
|
TPC8021-H(TE12LQ,MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 11A 8SOP |
|
FQAF12N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.8A TO3PF |
|
SUP85N10-10P-GE3Vishay / Siliconix |
MOSFET N-CH 100V 85A TO220AB |
|
IPD530N15N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A TO252-3 |
|
TPCC8002-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 22A 8TSON |
|
IXTA240N055T7Wickmann / Littelfuse |
MOSFET N-CH 55V 240A TO263-7 |
|
SUM70N04-07L-E3Vishay / Siliconix |
MOSFET N-CH 40V 70A TO263 |
|
IRFR2607ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
|
IRLR7833TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A DPAK |
|
IRF3717PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 20A 8SO |
|
TPC8A06-H(TE12LQM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 12A 8SOP |
|
BS250KL-TR1-E3Vishay / Siliconix |
MOSFET P-CH 60V 270MA TO92-18RM |