类型 | 描述 |
---|---|
系列: | STripFET™ III |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 24 V |
电流 - 连续漏极 (id) @ 25°c: | 150A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 3.5mOhm @ 75A, 10V |
vgs(th) (最大值) @ id: | 1.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 93 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4450 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 125W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF5806TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 4A MICRO6 |
|
IXTP44N30TWickmann / Littelfuse |
MOSFET N-CH 300V 44A TO220AB |
|
FDMC612PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 14A 8MLP |
|
HUF75345S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
|
IPDH5N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO252-3 |
|
SI7452DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 11.5A PPAK SO-8 |
|
IRLU3715IR (Infineon Technologies) |
MOSFET N-CH 20V 54A I-PAK |
|
SI1411DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 420MA SC70-6 |
|
ZXM64P035L3Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 35V 3.3A/12A TO220-3 |
|
IXFH80N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 80A TO-247 |
|
SPD35N10IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO252-3 |
|
IRF7726TRIR (Infineon Technologies) |
MOSFET P-CH 30V 7A MICRO8 |
|
STU11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A IPAK |