English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.6mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 480W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD6760ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 27A/50A DPAK |
|
IXTQ28N15PWickmann / Littelfuse |
MOSFET N-CH TO3P |
|
RRS100P03TB1ROHM Semiconductor |
MOSFET P-CH 30V 10A 8SOP |
|
IRFBF30SPBFVishay / Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
|
IXFT26N60QWickmann / Littelfuse |
MOSFET N-CH 600V 26A TO268 |
|
IPI100N06S3-03IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO262-3 |
|
IRLR3715ZTRRIR (Infineon Technologies) |
MOSFET N-CH 20V 49A DPAK |
|
IRL3715SPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 54A D2PAK |
|
STP80N70F6STMicroelectronics |
MOSFET N-CH 68V 96A TO220 |
|
SPI80N03S2L-04IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO262-3 |
|
AO4482L_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 6A 8SOIC |
|
SIA439EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 28A PPAK SC70-6 |
|
ECH8601M-C-TL-HXSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 8A ECH8 |
