类型 | 描述 |
---|---|
系列: | STripFET™ |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 27mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 166 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6000 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 180W (Tc) |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS4707NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.9A 5DFN |
|
IRFR120NCTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 9.4A DPAK |
|
IRF3706STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 77A D2PAK |
|
2SJ162-ERenesas Electronics America |
MOSFET P-CH 160V 7A TO3P |
|
IRF7207PBFIR (Infineon Technologies) |
MOSFET P-CH 20V 5.4A 8SO |
|
RJK0451DPB-00#J5Renesas Electronics America |
MOSFET N-CH 40V 35A LFPAK |
|
STF26NM60N-HSTMicroelectronics |
MOSFET N-CH 600V 20A TO220FP |
|
RSS110N03TBROHM Semiconductor |
MOSFET N-CH 30V 11A 8SOP |
|
IRFH7185TRPBFIR (Infineon Technologies) |
MOSFET N CH 100V 19A 8QFN |
|
BUK9240-100A/C1,11NXP Semiconductors |
MOSFET N-CH 100V 33A DPAK |
|
RJK1052DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |
|
IRF6644TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10.3A DIRECTFET |
|
SPB03N60S5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3.2A TO263-3 |