English
简体中文
MOSFET N-CH 30V 30A TO252-3
MODULE DDR2 SDRAM 2GB 240UDIMM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.7mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 85µA |
| 栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2530 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 136W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO252-3 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR9120NCPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A DPAK |
|
IPB05N03LBIR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO263-3 |
|
SI7404DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8.5A PPAK 1212-8 |
|
IXTH1N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 1.5A TO247 |
|
SI3442CDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 8A 6TSOP |
|
NTP75N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A TO220AB |
|
IPD250N06N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 28A TO252-3 |
|
PSMN050-80PS,127NXP Semiconductors |
MOSFET N-CH 80V 22A TO220AB |
|
SPI42N03S2L-13IR (Infineon Technologies) |
MOSFET N-CH 30V 42A TO262-3 |
|
NP88N04KUG-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 88A TO263 |
|
IRF3315SIR (Infineon Technologies) |
MOSFET N-CH 150V 21A D2PAK |
|
2SK3670,F(JToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
|
STP11NM60ASTMicroelectronics |
MOSFET N-CH 600V 11A TO220AB |