English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 89A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 10mOhm @ 46A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 98 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 3600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 170W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS135N03LGAKMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO251-3 |
|
SPU08P06PIR (Infineon Technologies) |
MOSFET P-CH 60V 8.83A TO251-3 |
|
SI7160DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 20A PPAK SO-8 |
|
NVMFS5C673NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
|
IXTA152N085T7Wickmann / Littelfuse |
MOSFET N-CH 85V 152A TO263-7 |
|
IPD60R750E6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 5.7A TO252-3 |
|
SPP18P06PHKSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 18.7A TO220-3 |
|
NTD3055L104Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK |
|
IRF4104LPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO262 |
|
ZXMN3A01E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.4A SOT23-6 |
|
IXTC180N085TWickmann / Littelfuse |
MOSFET N-CH 85V 110A ISOPLUS220 |
|
BUK9Y12-80E,115Nexperia |
MOSFET N-CH 80V LFPAK56 PWR-SO8 |
|
SI1031X-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 155MA SC75A |
