English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3120 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Ta), 114W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PQFN (5x6) |
| 包/箱: | 8-VQFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFP240Vishay / Siliconix |
MOSFET N-CH 200V 20A TO247-3 |
|
RSS075P03FU6TBROHM Semiconductor |
MOSFET P-CH 30V 7.5A 8SOP |
|
FQA24N50F_F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 24A TO3P |
|
IPB65R600C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A D2PAK |
|
R6046FNZC8ROHM Semiconductor |
MOSFET N-CH 600V 46A TO3PF |
|
IRF614STRLVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
FQB7N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.5A D2PAK |
|
SPI07N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO262-3 |
|
AON6786_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24A/85A 8DFN |
|
IRFU15N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 17A IPAK |
|
IRF3709ZCSTRLIR (Infineon Technologies) |
MOSFET N-CH 30V 87A D2PAK |
|
AO4435L_104Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 10.5A 8SOIC |
|
IPP80N04S3-04IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
