English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 64A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 12mOhm @ 34A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1650 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 94W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPP100N04S2-04IR (Infineon Technologies) |
MOSFET N-CH 40V 100A TO220-3 |
|
BSP613PL6327HUSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 2.9A SOT223-4 |
|
SI4484EY-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 4.8A 8SO |
|
IRFD120Vishay / Siliconix |
MOSFET N-CH 100V 1.3A 4DIP |
|
SI7366DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 13A PPAK SO-8 |
|
IXFR90N20Wickmann / Littelfuse |
MOSFET N-CH 200V 90A ISOPLUS247 |
|
IXTH10P50Wickmann / Littelfuse |
MOSFET P-CH 500V 10A TO247 |
|
IRLR3410CPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
SI4462DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 1.15A 8SO |
|
SI1470DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 5.1A SC70-6 |
|
MCH3333A-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2A SC70FL/MCPH3 |
|
NTMFS4965NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
SI3447BDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 4.5A 6TSOP |
