English
简体中文
CAP FILM 0.33UF 20% 800VDC RAD
MOSFET P-CH 20V 2.2A SOT23-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 70mOhm @ 2.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10.3 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 940 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 480mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS04N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO251-3 |
|
NVD4805NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.7A/95A DPAK |
|
IRLR014NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 10A DPAK |
|
SIS426DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 35A PPAK1212-8 |
|
AUIRF7739L2IR (Infineon Technologies) |
MOSFET N-CH 40V 46A DIRECTFET |
|
IXTN320N10TWickmann / Littelfuse |
MOSFET N-CH 100V 320A SOT-227B |
|
FQD2N40TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 1.4A DPAK |
|
IRFR3103IR (Infineon Technologies) |
MOSFET N-CH 400V 1.7A DPAK |
|
IRFR5505CTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A DPAK |
|
STP9NK60ZDSTMicroelectronics |
MOSFET N-CH 600V 7A TO220AB |
|
IRL3713SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 260A D2PAK |
|
SPI80N06S2-08IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO262-3 |
|
FCD4N60TM_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |