English
简体中文
MOSFET N-CH 60V 35A POWER56
T5009 FLX1 2N/C+1NO BBM, 3 X 1/2
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 16.5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1980 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 75W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Power56 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLU7821IR (Infineon Technologies) |
MOSFET N-CH 30V 65A I-PAK |
|
FQA7N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.7A TO3P |
|
SI1046X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V SC89-3 |
|
SI5432DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A 1206-8 |
|
FQPF10N60CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F |
|
IPD60R600C6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO252-3 |
|
AOTF2N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO220-3F |
|
DMN4027SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 6A 8SO |
|
IPU13N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO251-3 |
|
PH4830L,115NXP Semiconductors |
MOSFET N-CH 30V 84A LFPAK56 |
|
IRF6215SPBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A D2PAK |
|
NVMFS5844NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11.2A 5DFN |
|
SPA12N50C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 11.6A TO220-FP |