English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta), 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.3mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1430 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.2W (Ta), 42W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET™ SQ |
| 包/箱: | DirectFET™ Isometric SQ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDU8796_F071Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 35A IPAK |
|
NTR3162PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.2A SOT23-3 |
|
IRF9388PBFIR (Infineon Technologies) |
MOSFET P-CH 30V 12A 8SO |
|
SIB412DK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 9A PPAK SC75-6 |
|
STD60NH03L-1STMicroelectronics |
MOSFET N-CH 30V 60A I-PAK |
|
IRFS3004-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
SI7413DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 8.4A PPAK1212-8 |
|
IXTP7N60PMWickmann / Littelfuse |
MOSFET N-CH 600V 4A TO220AB |
|
SIB413DK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 9A PPAK SC75-6 |
|
NVMFS5C682NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
|
TK4A65DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 3.5A TO220SIS |
|
STU95N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A IPAK |
|
IRL540LVishay / Siliconix |
MOSFET N-CH 100V 28A TO262-3 |
