English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 145mOhm @ 2.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.5 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 400 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | -25°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SUP50N10-21P-GE3Vishay / Siliconix |
MOSFET N-CH 100V 50A TO220AB |
|
FDB8874Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A/121A TO263AB |
|
FDW256PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 8A 8TSSOP |
|
FQP6N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.2A TO220-3 |
|
BSO052N03SIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8DSO |
|
FQD3P20TFSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 2.4A DPAK |
|
IXTA2N80Wickmann / Littelfuse |
MOSFET N-CH 800V 2A TO263 |
|
SI5401DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 5.2A 1206-8 |
|
IPD160N04LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 30A TO252-3 |
|
IPB65R045C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 46A D2PAK |
|
IXTQ30N50PWickmann / Littelfuse |
MOSFET N-CH 500V 30A TO3P |
|
IRF2804STRRIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
PHP143NQ04T,127NXP Semiconductors |
MOSFET N-CH 40V 75A TO220AB |
