English
简体中文
CAP SCREW HEX 1/4"-20
MOSFET N-CH 800V 2A TO263
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6.2Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 440 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 54W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI5401DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 5.2A 1206-8 |
|
IPD160N04LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 30A TO252-3 |
|
IPB65R045C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 46A D2PAK |
|
IXTQ30N50PWickmann / Littelfuse |
MOSFET N-CH 500V 30A TO3P |
|
IRF2804STRRIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
PHP143NQ04T,127NXP Semiconductors |
MOSFET N-CH 40V 75A TO220AB |
|
IPP65R660CFDAAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220-3 |
|
R6015ANZC8ROHM Semiconductor |
MOSFET N-CH 600V 15A TO3PF |
|
IRF7416GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 10A 8SO |
|
PMF77XN,115NXP Semiconductors |
MOSFET N-CH 30V 1.5A SOT323-3 |
|
IRL3714ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO220AB |
|
2SK0665G0LPanasonic |
MOSFET N-CH 20V 100MA SMINI3-F2 |
|
IRFR024TRLVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |