English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 430mOhm @ 4.4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 710 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 74W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RQJ0303PGDQA#H6Renesas Electronics America |
MOSFET P-CH 30V 3.3A 3MPAK |
|
SI1073X-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 0.98A SC89-6 |
|
BUK9E06-55B,127Nexperia |
MOSFET N-CH 55V 75A I2PAK |
|
NTP30N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 27A TO220AB |
|
IRFR214TRVishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
IRF7805ATRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A 8SO |
|
BUZ31L E3044AIR (Infineon Technologies) |
MOSFET N-CH 200V 13.5A TO220-3 |
|
AON6248Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 17.5A/53A 8DFN |
|
IPD26DP06NMSAUMA1IR (Infineon Technologies) |
MOSFET P-CH 60V TO252-3 |
|
SI6459BDQ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 2.2A 8TSSOP |
|
IRF6715MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 34A DIRECTFET |
|
SI4833BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 4.6A 8SOIC |
|
IRLR3103TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 55A DPAK |
