English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 21mOhm @ 7.4A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 588 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 820mW (Ta), 8.33W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSP315PE6327TIR (Infineon Technologies) |
MOSFET P-CH 60V 1.17A SOT223-4 |
|
IRLR024ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 16A DPAK |
|
IRL5602IR (Infineon Technologies) |
MOSFET P-CH 20V 24A TO220AB |
|
IPS09N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
|
IRFS52N15DPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 51A D2PAK |
|
ZVN2110ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 320MA E-LINE |
|
NTB75N06LGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
|
NVMFS5C645NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A 5DFN |
|
IRF6795MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 32A DIRECTFET |
|
AO3422L_103Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 55V 2.1A SOT23-3 |
|
IRF3205LIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |
|
2N6796Microsemi |
MOSFET N-CH 100V 8A TO39 |
|
FQB5N30TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 5.4A D2PAK |
