类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 21A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4.2mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 51 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2700 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.7W (Ta), 127W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RJK0652DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 35A LFPAK |
|
IRFU48ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 42A IPAK |
|
2SK4021(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 250V 4.5A PW-MOLD2 |
|
64-8016IR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO220AB |
|
FDP34N33Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 330V TO220-3 |
|
RFD12N06RLESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A IPAK |
|
IRL3102LVishay / Siliconix |
MOSFET N-CH 20V 61A TO262-3 |
|
CMPDM203NH TRCentral Semiconductor |
MOSFET N-CH 20V 3.2A SOT-23F |
|
PMPB25ENEAXNexperia |
MOSFET N-CH 30V 7.2A DFN2020MD-6 |
|
BSD214SN L6327IR (Infineon Technologies) |
MOSFET N-CH 20V 1.5A SOT363-6 |
|
STB76NF80STMicroelectronics |
MOSFET N-CH 80V 80A D2PAK |
|
FQI19N20CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 19A I2PAK |
|
RSS075P03TBROHM Semiconductor |
MOSFET P-CH 30V 7.5A 8SOP |