English
简体中文
RF SHIELD 5" X 5" THROUGH HOLE
MOSFET N-CH 30V 59A D2PAK
DIODE GPP HE 6A R-6
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 59A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.5mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 2.25V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1210 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PHB193NQ06T,118NXP Semiconductors |
MOSFET N-CH 55V 75A D2PAK |
|
STF20NF06STMicroelectronics |
MOSFET N-CH 60V 20A TO220FP |
|
IXFC36N50PWickmann / Littelfuse |
MOSFET N-CH 500V 19A ISOPLUS220 |
|
IRF710LVishay / Siliconix |
MOSFET N-CH 400V 2A I2PAK |
|
RJK0856DPB-00#J5Renesas Electronics America |
MOSFET N-CH 80V 35A LFPAK |
|
IRLR7807ZCPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 43A DPAK |
|
IRFR3706CTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 75A DPAK |
|
AO7403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 700MA SC70-3 |
|
RFD3055SMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A TO252AA |
|
IXFH21N50Wickmann / Littelfuse |
MOSFET N-CH 500V 21A TO247AD |
|
SUP85N04-03-E3Vishay / Siliconix |
MOSFET N-CH 40V 85A TO220AB |
|
AOB2608LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 11A/72A TO263 |
|
2SJ665-DL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 27A SMP-FD |