类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta), 72A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 7.6mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3.6V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2995 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2.1W (Ta), 100W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 (D²Pak) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SJ665-DL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 27A SMP-FD |
|
STU70N2LH5STMicroelectronics |
MOSFET N-CH 25V 48A IPAK |
|
IRFBC40STRLVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
SI4823DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.1A 8SO |
|
SUP36N20-54P-E3Vishay / Siliconix |
MOSFET N-CH 200V 36A TO220AB |
|
BUK9508-55A,127NXP Semiconductors |
MOSFET N-CH 55V 75A TO220AB |
|
IXTP130N065T2Wickmann / Littelfuse |
MOSFET N-CH 65V 130A TO220AB |
|
IRF1404ZSTRRIR (Infineon Technologies) |
MOSFET N-CH 40V 180A D2PAK |
|
FDD3N40TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 2A DPAK |
|
IPD12N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
IRF7476IR (Infineon Technologies) |
MOSFET N-CH 12V 15A 8SO |
|
AO4407ALAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
|
IXTP27N20TWickmann / Littelfuse |
MOSFET N-CH 200V 27A TO220AB |