English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TEMPFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 49 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 36A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 240µA |
| 栅极电荷 (qg) (max) @ vgs: | 232 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4800 pF @ 25 V |
| 场效应管特征: | Temperature Sensing Diode |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | P-TO220-7-230 |
| 包/箱: | TO-220-7 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD2572-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4A/29A TO252AA |
|
IPD16CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 53A TO252-3 |
|
IXTC220N055TWickmann / Littelfuse |
MOSFET N-CH 55V 130A ISOPLUS220 |
|
NTD32N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A DPAK |
|
FDMS0309AS_SN00347Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 21A/49A 8PQFN |
|
2SK3546G0LPanasonic |
MOSFET N-CH 50V 100MA SMINI3-F2 |
|
IXTV102N20TWickmann / Littelfuse |
MOSFET N-CH 200V 102A PLUS220 |
|
MIC94051BM4 TRRoving Networks / Microchip Technology |
MOSFET P-CH 6V 1.8A SOT143 |
|
IRF7451IR (Infineon Technologies) |
MOSFET N-CH 150V 3.6A 8SO |
|
2SJ661-DL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A SMP-FD |
|
SI5406CDC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 6A 1206-8 |
|
SI4384DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 10A 8SO |
|
NTD65N03R-035Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 9.5A/32A IPAK |
