类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 20mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2V @ 25µA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 700 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 60W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | P-TO251-3-1 |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AON6590_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 67A/100A 8DFN |
|
IRFR4104TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 42A DPAK |
|
IRFU13N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 13A IPAK |
|
STB120N10F4STMicroelectronics |
MOSFET N-CH 100V D2PAK |
|
PHP52N06T,127NXP Semiconductors |
MOSFET N-CH 60V 52A TO220AB |
|
IRL3714ZIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO220AB |
|
IRFSL59N10DIR (Infineon Technologies) |
MOSFET N-CH 100V 59A TO262 |
|
IXFT60N25QWickmann / Littelfuse |
MOSFET N-CH 250V 60A TO268 |
|
STW28NK60ZSTMicroelectronics |
MOSFET N-CH 600V 27A TO247-3 |
|
FQP32N20C_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 28A TO220-3 |
|
N0439N-S19-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO220 |
|
94-2989IR (Infineon Technologies) |
MOSFET N-CH 55V 64A D2PAK |
|
APT20F50BMicrosemi |
MOSFET N-CH 500V 20A TO247 |