RES 84.5K OHM 0.1% 1/8W 0805
RES 78.7 OHM 0.5% 1/8W 0805
MOSFET P-CH 12V 25A PPAK
FXPC OM1 LC_DX LC_DX 31M
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 8.2mOhm @ 6A, 4.5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 105 nC @ 8 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 4100 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 31W (Tc) |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® ChipFet Single |
包/箱: | PowerPAK® ChipFET™ Single |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRLL110Vishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
![]() |
IPB10N03LBIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO263-3 |
![]() |
MTD6N20ET5GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6A DPAK |
![]() |
NTD18N06L-001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A IPAK |
![]() |
BSP299H6327XUSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 400MA SOT223-4 |
![]() |
BSS7728NL6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
![]() |
NVMFS6B03NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A 5DFN |
![]() |
STB23NM60NDSTMicroelectronics |
MOSFET N-CH 600V 19.5A D2PAK |
![]() |
SIE822DF-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 50A 10POLARPAK |
![]() |
SPB77N06S2-12IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
![]() |
IRFU3418PBFIR (Infineon Technologies) |
MOSFET N-CH 80V 70A IPAK |
![]() |
IRL3714PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO220AB |
![]() |
IRLR3303TRRIR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |