English
简体中文
TVS DIODE 51V 82.4V DO214AB
MOSFET N-CH 30V 35A DPAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 31mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 26 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 68W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM2301CX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
|
IRF5804TRPBFIR (Infineon Technologies) |
MOSFET P-CH 40V 2.5A MICRO6 |
|
AO4498LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A 8SOIC |
|
IRFP344PBFVishay / Siliconix |
MOSFET N-CH 450V 9.5A TO247-3 |
|
HUFA76423S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 35A D2PAK |
|
STB16PF06LT4STMicroelectronics |
MOSFET P-CH 60V 16A D2PAK |
|
NP80N055MHE-S18-AYRenesas Electronics America |
MOSFET N-CH 55V 80A TO220-3 |
|
IRL8113SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 105A D2PAK |
|
SI1069X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 0.94A SC89-6 |
|
STL150N3LLH6STMicroelectronics |
MOSFET N-CH 30V 150A POWERFLAT |
|
IRF2903ZSTRRPIR (Infineon Technologies) |
MOSFET N-CH 30V 75A D2PAK |
|
FDPF12N50NZTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.5A TO220F |
|
BUK7628-55A,118NXP Semiconductors |
MOSFET N-CH 55V 42A D2PAK |