English
简体中文
DC DC CONVERTER +/-12V 984MW
MOSFET N-CH 30V 75A TO220AB
TVS DIODE 23.1V 37.5V T-18
3600 PRE-TERM ASSY BLU 18FT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 2.8mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF6665IR (Infineon Technologies) |
MOSFET N-CH 100V 4.2A DIRECTFET |
|
NTHD3101FT3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.2A CHIPFET |
|
SI1054X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 1.32A SC89-6 |
|
NVMFS6B85NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.6A/19A 5DFN |
|
STB21NM50NSTMicroelectronics |
MOSFET N-CH 500V 18A D2PAK |
|
SFH9240Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 11A TO3P |
|
NVMFS5C426NWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
SUP40N10-30-GE3Vishay / Siliconix |
MOSFET N-CH 100V 38.5A TO220AB |
|
NTHS2101PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 8V 5.4A CHIPFET |
|
IRFS11N50ATRRVishay / Siliconix |
MOSFET N-CH 500V 11A D2PAK |
|
IRFS17N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 16A D2PAK |
|
AUIRFL024NIR (Infineon Technologies) |
MOSFET N-CH 55V 2.8A SOT-223 |
|
IRF740STRRVishay / Siliconix |
MOSFET N-CH 400V 10A D2PAK |