RES 140K OHM 1/8W 1% AXIAL
MOSFET N-CH 200V 208A SP4
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 208A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 10mOhm @ 104A, 10V |
vgs(th) (最大值) @ id: | 5V @ 5mA |
栅极电荷 (qg) (max) @ vgs: | 280 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 14400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 781W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
供应商设备包: | SP4 |
包/箱: | SP4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SIA413ADJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 12A PPAK SC70-6 |
![]() |
NILMS4501NR2Rochester Electronics |
MOSFET N-CH 24V 9.5A 4PLLP |
![]() |
2SK160A-L-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
2SJ661-1EXRochester Electronics |
PCH 4V DRIVE SERIES |
![]() |
SSF10N80ARochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SI8819EDB-T2-E1Vishay / Siliconix |
MOSFET P-CH 12V 2.9A 4MICRO FOOT |
![]() |
PMPB12R7EPXNexperia |
PMPB12R7EP - 30 V, P-CHANNEL TRE |
![]() |
PMPB14R7EPXNexperia |
MOSFET P-CH 30V 8A DFN2020M-6 |
![]() |
RJK2075DPA-00#J5ARenesas Electronics America |
MOSFET N-CHANNEL 200V 20A WPAK |
![]() |
STD1065T4Rochester Electronics |
NFET DPAK SPECIAL |
![]() |
3SK323UG-TL-ERochester Electronics |
N-CHANNEL DUAL GATE MOSFET |
![]() |
2SK1133-T2B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPT043N15N5ATMA1IR (Infineon Technologies) |
MV POWER MOS |