English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 145mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 94 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.04kW (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK4100LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
CMS46N03V8-HFComchip Technology |
MOSFET N-CH 30V 46A 8PDFN |
|
|
RFD16N03LSM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
TK20E60W5,S1VXToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
|
SSM3J145TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 3A UFM |
|
|
NTHL040N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 60A TO247-3 |
|
|
BB502MBS-TR-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
|
TK15S04N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 15A DPAK |
|
|
IPW65R155CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
IPN80R1K4P7Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FCPF600N65S3R0L-F154Sanyo Semiconductor/ON Semiconductor |
POWER SUPERFET MOSFET N-CHANNEL |
|
|
RJK0389DPA-WS#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
IRFP460APBFXKMA1IR (Infineon Technologies) |
PLANAR >= 100V |
