HOOK-UP STRND 20AWG BLACK 5000'
MOSFET N-CH 40V 27A/136A 8WDFN
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 27A (Ta), 136A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.4mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 90µA |
栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2250 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.2W (Ta), 85W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-WDFN (3.3x3.3) |
包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPZA65R018CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
BSC883N03LS GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2371(1)-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMH850UPEHNexperia |
MOSFET P-CH 30V 600MA DFN0606-3 |
|
FDMS86181ESanyo Semiconductor/ON Semiconductor |
FET 100V 4.2 MOHM PQFN56 |
|
2SJ586CPTL-ERochester Electronics |
P-CHANNEL MOSFET |
|
4AM14Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
BTS244ZAKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ645-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
2SK1160-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IGT40R070D1E8220ATMA1IR (Infineon Technologies) |
MOSFET N-CH 400V 31A HSOF-8-3 |
|
NTMFS6H848NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 13A/59A 5DFN |
|
NTBS2D7N06M7Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 110A D2PAK-3 |