类型 | 描述 |
---|---|
系列: | MDmesh™ M6 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 125mOhm @ 12.5A, 10V |
vgs(th) (最大值) @ id: | 4.75V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 33.4 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1515 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 190W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS6H852NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/42A 5DFN |
|
SI6953DQRochester Electronics |
P-CHANNEL MOSFET |
|
DMN3009LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 60A POWERDI3333 |
|
NTMFS0D8N02P1ET1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 55A/365A 5DFN |
|
5HN02N-AARochester Electronics |
TRANS MOSFET N-CH 50V 0.2A |
|
RJK03J0DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
FDB9506L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V |
|
RJK0348DPA-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPC60R385CPX1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
IRF448Rochester Electronics |
MOSFET N-CH 500V 7.9A TO204AE |
|
DMT3006LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 60A POWERDI3333 |
|
PMXB65UPE147Rochester Electronics |
P-CHANNEL MOSFET |
|
N0300P-T1B-ATRochester Electronics |
SIGNAL DEVICE |