English
简体中文
MOSFET N-CH 30V 100A PPAK SO-8
IGBT CHIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 0.8mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 153 nC @ 10 V |
| vgs (最大值): | +20V, -16V |
| 输入电容 (ciss) (max) @ vds: | 10180 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 104W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
2SK3305B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
APTM120UM70DAGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 171A SP6 |
|
|
RQJ0304DQDQSWS#H3Rochester Electronics |
P CH MOS FET POWER SWITCHING |
|
|
FL6L52030LPanasonic |
MOSFET P-CH 20V 1A WSSMINI6-F1 |
|
|
SISC624P06X3MA1IR (Infineon Technologies) |
SMALL SIGNAL+P-CH |
|
|
RFP45N06LERochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
AUIRFS3004-7P-IRRochester Electronics |
PFET, 240A I(D), 40V, 0.00125OHM |
|
|
RFP15N08LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
ON5275/C1135Rochester Electronics |
MOSFET RF, SOT223 |
|
|
NTMTS0D7N06CLTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 62.2A/477A 8DFNW |
|
|
RJK0226DNS-WS#J5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
2SJ687-ZK-E2-AYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
NDCTR50120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 50A SMD |