类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NDCTR50120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 50A SMD |
|
VN1210M-TARochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDZ595PZRochester Electronics |
FDZ595PZ |
|
SIPC10N60C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
STP10NK62ZFPSTMicroelectronics |
MOSFET |
|
NVMFS6B14NT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
RFH45N05Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPS04N60C3AKMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFM3N45Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
HAT2201WP-EL-ERochester Electronics |
15A, 100V, N-CHANNEL MOSFET |
|
SI6955DQRochester Electronics |
P-CHANNEL MOSFET |
|
IPA034N08NM5SXKSA1IR (Infineon Technologies) |
TRENCH 40<-<100V |
|
NTMFS5C645NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/100A 5DFN |