类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MTV32N20ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2529-90-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI4953DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
2SK544ERochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
SIR826DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
IRF632Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NE5550779A-T1A-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP052NE7N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03E0DNS-02#J5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ463A(91)-T1-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
IRFBC40RRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJS4D9N03HTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.5A 6PQFN |
|
RF1S23N06LESM9ARochester Electronics |
N-CHANNEL POWER MOSFET |